Advance Technical Information
High Current
MegaMOS TM FET
IXTK 75N30
V DSS
I D25
R DS(on)
= 300 V
= 75 A
= 42 m ?
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
V DSS
V DGR
V GS
T J = 25°C to 150°C
T J = 25°C to 150°C; R GS = 1.0 M ?
Continuous
300
300
±20
V
V
V
TO-264 AA (IXTK)
V GSM
I D25
I DM
I AR
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
±30
75
300
75
V
A
A
A
G
D
S
D (TAB)
E AR
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
= 25 ° C
T C
60
2.5
5
540
mJ
J
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
T L
M d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
300
0.7/6
10
° C
Nm/lb.in.
g
Features
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? International standard package
? Fast switching times
Applications
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
? Motor controls
? DC choppers
V DSS
V GS = 0 V, I D = 1 mA
300
V
? Switched-mode power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ±20 V DC, V DS = 0
V DS = V DSS
T J = 25°C
2.0
4.0
±100
50
V
nA
μ A
Advantages
? Easy to mount with one screw
(isolated mounting screw hole)
? Space savings
V GS = 0 V
T J = 125°C
2 mA
? High power density
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
42 m ?
? 2003 IXYS All rights reserved
DS99012(03/03)
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